水平化学气相沉积炉
- 类别： 产品展示
- 产品描述：
This equipment is primarily designed for coating silicon carbide on the surface of graphite (or silicon carbide) substrates. With a high degree of automation, it enables fully automated control and can be completed with a single button press. It features automatic positive and negative pressure leak detection, multi-segment temperature curve setting, and breakpoint continuous heating. Additionally, it allows for the setting of gas flow rate and furnace pressure for each segment, with automatic and precise control of gas flow rate. The equipment is equipped with comprehensive safety interlock functions to ensure both equipment and personnel safety.
The equipment consists of a furnace body, a heating and insulation system, a gas circuit system, a vacuum system, a water cooling system, an electrical/control system, etc.
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Furnace body specifications |
Equipment model: VHCgr-20/20/30-1600 Equipment structure: horizontal, single chamber, side discharge Effective temperature equalization zone dimensions: 200×200×300mm (W×H×D) |
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Heating index |
Maximum design temperature: 1600℃ Long-term usage temperature: 1400℃ Heating method: resistive heating Rated heating power: 45 kW Heating element: isostatically pressed graphite plate Temperature control accuracy: ±1℃ (the difference between the set temperature and the measured temperature when the device is in the heat preservation stage) Temperature uniformity: ≤±3℃ (maintain at 1000℃ for 1 hour, measure temperature at 5 points) Temperature control method: HMI + PLC + PID |
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vacuum performance |
Ultimate vacuum degree: 10Pa (after drying, empty furnace, cold state) Vacuum pumping rate: 1 atm to 10 Pa, t ≤ 40 min (after baking, empty furnace, cold state) Pressure rise rate: 0.67 Pa/h (calculated after drying, empty furnace, cold state, and maintaining pressure for 12 hours) |
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atmosphere |
Vacuum, N2, H2, Ar, MTS, HCl (tail gas) Maximum design pressure: 1.2 bar (absolute pressure) Rated inflation pressure: 1.1 bar (absolute pressure) Air intake mode: side air intake, side air exhaust Silicon source supply method: bubbling type |
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other |
Equipped with a material table rotation function, with continuously adjustable rotation speed |
